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Transcend TS256MSK64V1N memory module 2 GB 1 x 8 GB DDR3 204-pin SO-DIMM
Transcend TS256MSK64V1N memory module 2 GB 1 x 8 GB DDR3 204-pin SO-DIMM
SKU : TS256MSK64V1N
Transcend TS256MSK64V1N memory module 2 GB 1 x 8 GB DDR3 204-pin SO-DIMM
Short Description:
Transcend TS256MSK64V1N, 2 GB, 1 x 8 GB, DDR3, 1066 MHz, 204-pin SO-DIMM
Manufacturer part number :
TS256MSK64V1N
Vendor
:
TRANSCEND INFORMATION
Stock
:
0
Description
Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
- JEDEC standard 1.5V ± 0.075V power supply
- Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
- 8 bit pre-fetch
- Burst Length: 4, 8
- Internal calibration through ZQ pin
- On-die termination with ODT pin
- Serial presence detect with EEPROM
- 100% tested for stability, compatibility and performance
- 2 GB DDR3
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 7
- 1.5 V
Specifications
Features
Memory form factor
204-pin SO-DIMM
Memory ranking
1
Buffered memory type
Unregistered (unbuffered)
Memory clock speed
1066 MHz
ECC
No
CAS latency
7
Internal memory
2 GB
Memory voltage
1.5 V
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3
Logistics data
Harmonized System (HS) code
84733020
Operational conditions
Operating temperature (T-T)
0 - 85 °C
Storage
RAM Type
DRAM
Weight & dimensions
Height
1.18 Inch
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Description
Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
- JEDEC standard 1.5V ± 0.075V power supply
- Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
- 8 bit pre-fetch
- Burst Length: 4, 8
- Internal calibration through ZQ pin
- On-die termination with ODT pin
- Serial presence detect with EEPROM
- 100% tested for stability, compatibility and performance
- 2 GB DDR3
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 7
- 1.5 V
Specifications
Features
Memory form factor
204-pin SO-DIMM
Memory ranking
1
Buffered memory type
Unregistered (unbuffered)
Memory clock speed
1066 MHz
ECC
No
CAS latency
7
Internal memory
2 GB
Memory voltage
1.5 V
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3
Logistics data
Harmonized System (HS) code
84733020
Operational conditions
Operating temperature (T-T)
0 - 85 °C
Storage
RAM Type
DRAM
Weight & dimensions
Height
1.18 Inch
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TS256MSK64V1N
Transcend TS256MSK64V1N memory module 2 GB 1 x 8 GB DDR3 204-pin SO-DIMM
Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.- JEDEC standard 1.5V ± 0.075V power supply
- Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
- 8 bit pre-fetch
- Burst Length: 4, 8
- Internal calibration through ZQ pin
- On-die termination with ODT pin
- Serial presence detect with EEPROM
- 100% tested for stability, compatibility and performance
- 2 GB DDR3
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 7
- 1.5 V
Technical specifications
Features
Memory form factor
204-pin SO-DIMM
Memory ranking
1
Buffered memory type
Unregistered (unbuffered)
Memory clock speed
1066 MHz
ECC
No
CAS latency
7
Internal memory
2 GB
Memory voltage
1.5 V
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3
Logistics data
Harmonized System (HS) code
84733020
Operational conditions
Operating temperature (T-T)
0 - 85 °C
Storage
RAM Type
DRAM
Weight & dimensions
Height
1.18 Inch
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